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1

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Pastorek, Matej, Olivier, Aurélien, Lechaux, Yoann, Wichmann, Nicolas, KARATSORI, Theano, Fahed, Maria, Bucamp, Alexandre, Addad, Ahmed, Troadec, David, Ghibaudo, Gerard, Desplanque, Ludovic, Wallart,

Journal:

Year:

2018

Language:

english

File:

PDF, 1.43 MB

english, 2018

2

A temporal fusion strategy for cross-camera data association

Cina Motamed, Olivier Wallart

Journal:

Pattern Recognition Letters

Year:

2007

Language:

english

File:

PDF, 2.13 MB

english, 2007

3

Covalent functionalization of silicon nitride surfaces by semicarbazide group

Yannick Coffinier, Rabah Boukherroub, Xavier Wallart, Jean-Philippe Nys, Jean-Olivier Durand, Didier Stiévenard, Bruno Grandidier

Journal:

Surface Science

Year:

2007

Language:

english

File:

PDF, 463 KB

english, 2007

4

Sb-HEMT: Toward 100-mV Cryogenic Electronics

Noudéviwa, A., Roelens, Y., Danneville, F., Olivier, A., Wichmann, N., Waldhoff, N., Lepilliet, S., Dambrine, G., Desplanque, L., Wallart, X., Moschetti, G., Grahn, J., Bollaert, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 857 KB

english, 2010

5

Semicarbazide-Functionalized Si(111) Surfaces for the Site-Specific Immobilization of Peptides

Coffinier, Y., Olivier, C., Perzyna, A., Grandidier, B., Wallart, X., Durand, J.-O., Melnyk, O., Stiévenard, D.

Journal:

Year:

2005

Language:

english

File:

PDF, 637 KB

english, 2005

6

Trichlorosilane Isocyanate as Coupling Agent for Mild Conditions Functionalization of Silica-Coated Surfaces

Ardès-Guisot, Nicolas, Durand, Jean-Olivier, Granier, Michel, Perzyna, Aurore, Coffinier, Yannick, Grandidier, Bruno, Wallart, Xavier, Stievenard, Didier

Journal:

Year:

2005

Language:

english

File:

PDF, 69 KB

english, 2005

7

[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Moschetti, G., Nilsson, P-A., Wadefalk, N., Malmkvist, M., Lefebvre, E., Grahn, J., Roelens, Y., Noudeviwa, A., Olivier, A., Bollaert, S., Danneville, F., Desplanque, L., Wallart, X., Dambrine, G.

Year:

2009

Language:

english

File:

PDF, 915 KB

english, 2009

8

Bonding in skutterudites: Combined experimental and theoretical characterization of

Lefebvre-Devos, I., Lassalle, M., Wallart, X., Olivier-Fourcade, J., Monconduit, L., Jumas, J. C.

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 622 KB

english, 2001

9

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - 100mV noise performances of Te-doped Sb-HEMT

Noudeviwa, A., Olivier, A., Roelens, Y., Danneville, F., Wichmann, N., Waldhoff, N., Desplanque, L., Wallart, X., Bollaert, S.

Year:

2010

Language:

english

File:

PDF, 98 KB

english, 2010

10

[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Olivier, A., Wichmann, N., Mo, J. J., Noudeviwa, A., Roelens, Y., Desplanque, L., Wallart, X., Danneville, F., Dambrine, G., Bollaert, S., Martin, F., Desplats, O., Saint-Martin, J., Shi, M., Wang, Y.

Year:

2010

Language:

english

File:

PDF, 272 KB

english, 2010

11

[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Tellurium δ-doped 120nm AlSb/InAs HEMTs: towards sub-100mV electronics

Roelens, Y., Olivier, A., Desplanque, L., Noudeviwa, A., Danneville, F., Wichmann, N., Wallart, X., Bollaert, S.

Year:

2010

Language:

english

File:

PDF, 541 KB

english, 2010

12

[IEEE 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves (IORMMW-THz 2009) - Busan, South Korea (2009.09.21-2009.09.25)] 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves - Investigation on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths

Beck, Alexandre, Offranc, Olivier, Zaknoune, Mohammed, Peytavit, Emilien, Ducournau, Guillaume, Akalin, Tahsin, Wallart, Xavier, Lampin, Jean-Francois

Year:

2009

Language:

english

File:

PDF, 295 KB

english, 2009

13

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation

Olivier, Aurelien, Gehin, Thomas, Desplanque, Ludovic, Wallart, Xavier, Roelens, Yannick, Dambrine, Gilles, Cappy, Alain, Bollaert, Sylvain, Lefebvre, Eric, Malmkvist, Mikael, Grahn, Jan

Year:

2008

Language:

english

File:

PDF, 978 KB

english, 2008

14

[IEEE 2009 67th Annual Device Research Conference (DRC) - University Park, PA, USA (2009.06.22-2009.06.24)] 2009 Device Research Conference - Narrow band gap III–V based-FET for ultra low power high frequency analog applications

Dambrine, Gilles, Bollaert, S., Roellens, Y., Noudeviwa, A., Danneville, F., Olivier, A., Wichmann, N., Desplanque, L., Wallart, X., Grahn, J., Moschetti, G., Nilsson, P.-A., Malmkvist, M., Lefebvre,

Year:

2009

Language:

english

File:

PDF, 402 KB

english, 2009

15

As Surface Segregation during the Growth of GaInP on GaAs

Dehaese, Olivier, Wallart, Xavier, Schuler, Olivier, Mollot, Francis

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 934 KB

1997

16

Picosecond Carrier Lifetime in Low-Temperature-Grown GaAsSb

Wallart, Xavier, Coinon, Christophe, Plissard, Sébastien, Godey, Sylvie, Offranc, Olivier, Androussi, Ydir, Magnin, Vincent, Lampin, Jean-François

Journal:

Applied Physics Express

Year:

2010

Language:

english

File:

PDF, 224 KB

english, 2010

17

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - Ultra thin body InAs MOSFET with raised InAs n + S/D by selective MBE

Pastorek, Matej, Ridaoui, Mohamed, Fadjie, Alain, Olivier, Aurelien, Wichmann, Nicolas, Desplanque, Ludovic, Wallart, Xavier, Bollaert, Sylvain

Year:

2017

Language:

english

File:

PDF, 418 KB

english, 2017